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488 Electrons, Over and Out

I had thought I would wait till number 500, but I didn't see any point in the round number. As of this entry, number 488, ELECTRON BLUE will cease publication. I have been thinking this over for a while. This Weblog has been going for more than four years, ever since February of 2004. I have written about all sorts of subjects, from math to music to art to surrealistic spam. This Weblog has a distinguished readership who enjoys visiting.

This all takes time to maintain and write, though, and at this point I don't have the time. My focus and scheduling are changing. Though I still love math and science, I have not spent as much time as I would like on it because I have increasing commitments with day job and artistic work. Things change in people's lives, and I am not different from other folks in that regard.

I know that my readers will still want to see new artwork from me, so this site will not go away. The "Electron Blue" weblog will be retired but the "machinery" will still be there, and a periodic "art show" will take its place, where I will present new finished work, and possibly talk about it. I will leave the archives of ELECTRON BLUE up on the site, available for browsers and search engines.

And so, as a late September thunderstorm rumbles outside, I place ELECTRON BLUE out into the pasture of memory, where it may stay a picturesque part of the Internet landscape as long as I own the land it was built on.

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PICO and SALVE: Understanding the Subatomic World Better - innovations report (Pressemitteilung)

PICO and SALVE: Understanding the Subatomic World Better
innovations report (Pressemitteilung), Germany - Dec 19, 2008
Two new high-resolution transmission electron microscopes, co-financed by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation), ...

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Electrical Properties of $hbox{Ga}_{2}hbox{O}_{3}/ hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

Electrical properties of $hbox{Ga}_{2}hbox{O}_{3}/hbox{GaAs}$ interfaces with GdGaO cap dielectrics used in recent enhancement-mode GaAs-based NMOSFETs which perform in line with theoretical model predictions are presented. Capacitors with GdGaO thickness ranging from 3.0 to 18 nm ($hbox{0.9} leq hbox{EOT} leq hbox{3.9} hbox{nm}$) have been characterized by capacitance–voltage measurements. Midgap interface state density $D_{rm it}$, effective workfunction $phi_{m}$, fixed charge $Q_{f}$, dielectric constant $kappa$, and low field leakage current density are $hbox{2} times hbox{10}^{11} hbox{cm}^{-2} cdot hbox{eV}^{-1}$, 4.93 eV, $-hbox{8.9} times hbox{10}^{11} hbox{cm}^{-2}$, 19.5, and $hbox{10}^{-9}{-} hbox{10}^{-8} hbox{A/cm}^{2}$, respectively. The presence of interfacial Gd was confirmed to dramatically degrade electrical interface properties. The data illuminate the intimate interplay between heterostructure and interface engineering to achieve optimum MOSFET operation.

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Active Plasmonics: Surface Plasmon Interaction With Optical Emitters

The interaction between surface plasmons and optical emitters is fundamentally important for engineering applications, especially surface plasmon amplification and controlled spontaneous emission. We investigate these phenomena in an active planar metal-film system comprising InGaN/GaN quantum wells and a silver film. First, we present a detailed study of the propagation and amplification of surface plasmon polaritons (SPPs) at visible frequencies. In doing so, we propose a multiple quantum well structure and present quantum well gain coefficient calculations accounting for SPP polarization, line broadening due to exciton damping, and particularly, the effects of finite temperature. Second, we show that the emission of an optical emitter into various channels (surface plasmons, lossy surface waves, and free radiation) can be precisely controlled by strategically positioning the emitters. Together, these could provide a range of photonic devices (for example, surface plasmon amplifiers, nanolasers, nanoemitters, plasmonic cavities) and a foundation for the study of cavity quantum electrodynamics associated with surface plasmons.

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Pitt, NETL researchers report molecular chain reaction thought to be impossible

People said it couldn't be done, but researchers from the University of Pittsburgh and the U.S. Department of Energy National Energy Technology Laboratory (NETL) in Pittsburgh demonstrated a molecular chain reaction on a metal surface, a nanoscale process with sizable potential in areas from nanotechnology to developing information storage technology. (2008-12-12)

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Rapid autotuning for crystalline specimens from an inline hologram

A method to measure the aberration function for a crystalline specimen from a single inline hologram or ‘Ronchigram’ by dividing it up into small patches is derived. Measurement of aberrations is demonstrated from both dynamical simulations and experimental Ronchigrams. This method should allow rapid fine-tuning on a variety of crystalline specimens and represents a key step toward active optics for scanning transmission electron microscopy.

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